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  MSW11N90 90 0v n - channel mosfet publication order number: [ msw 1 1 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 description this latest technology has been especially designed to minimize on - state resistance, have a high rugged avalanche characteristics. these devices are well suited for high efficiency switch mode power supplies. features ? rds(on) ( max 1.1 )@vg s=10v ? gate charge (typical 70 nc) ? improved dv/dt capability, high ruggedness ? 100% avalanche tested ? maximum junction temperature range (150?c) ? rohs compliant package packing & order information 30/tube ; 540/box graphic symbol ma ximum ratings and electrical characteristics absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit v ds s drain - source voltage 900 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 11 a drain current - continuous (tc= 100 c ) 6.6 a i dm drain current pulsed 44 a e as s ingle pulsed avalanche energy 1280 mj e ar repetitive avalanche energy 30 mj p d power dissipation ( tc = 25 c) - derate above 25 c 300 w 2.38 w/ c dv/dt peak diode recovery dv/dt 4 v/n s
MSW11N90 90 0v n - channel mosfet publication order number: [ msw 1 1 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit t j ,t stg operating and storage temperature range - 55 to +150 c t l maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c drain c urrent limited by maximum junction temperature thermal resistance characteristics symbol parameter max. unit s r j c junction - to - case 0.42 c /w r ja junction - to - ambient 40 on characteristics symbol test conditions min typ. max. unit s v gs v ds = v gs , i d = 250a 3.0 -- 5.0 v * r ds(on) v gs = 10 v , i d = 5.5 a -- 0.9 1.1 off characteristics symbol test conditions min typ. max. unit s b v dss v gs = 0 v , i d =250a 900 -- -- v b v dss / t j i d = 250a, referenced to 25 c -- 1.0 -- v/ c i dss v ds = 90 0 v , v gs = 0 v v ds = 72 0 v , v c = 125 c -- -- 10 100 a i gss f v gs = 3 0 v , v d s = 0 v -- -- 100 n a i gssr v gs = - 3 0 v , v d s = 0 v -- -- - 100 n a switching characteristics symbol test conditions min typ. max. unit s t d(on) v ds = 450 v, i d = 11 a, r g = 25 -- 70 -- ns t r -- 150 -- ns t d(off) -- 150 -- ns tf -- 90 -- ns q g v ds = 72 0 v,i d = 11 a, v gs = 10 v -- 70 -- nc q gs -- 15 -- nc q g d -- 30 -- nc c iss v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 3000 -- pf c oss -- 250 -- pf c rss -- 25 -- pf
MSW11N90 90 0v n - channel mosfet publication order number: [ msw 1 1 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 sourc e - drain diode characteristics symbol parameter test conditions min typ. max. unit s i s -- -- 11 a i sm -- -- 44 v sd i s = 11 a , v gs = 0 v -- -- 1.4 v t rr i s = 11 a , v gs = 0 v dif/dt = 100a/s -- 1200 -- ns q rr -- 20 -- c notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 20mh, i as = 11 a, v dd =5 0 v, r g =25 , starting t j =25 3 . i sd Q 11a , di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 4 . pulse test: pulse width Q 300 s, duty cycle Q 2% 5 . essentially independent of operating temperature
MSW11N90 90 0v n - channel mosfet publication order number: [ msw 1 1 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 typical characteristics fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diod e forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MSW11N90 90 0v n - channel mosfet publication order number: [ msw 1 1 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 typical characteristics fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temp erature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
MSW11N90 90 0v n - channel mosfet publication order number: [ msw 1 1 n 9 0 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliabi lity, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleten ess contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. t o the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. ( iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typ ical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a parti cular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. produc t specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.


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